US 11,942,552 B2
Method of manufacturing a semiconductor device and a semiconductor device
Shahaji B. More, Hsinchu (TW); and Chun Hsiung Tsai, Xinpu Township (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on May 9, 2022, as Appl. No. 17/740,097.
Application 17/740,097 is a continuation of application No. 16/940,312, filed on Jul. 27, 2020, granted, now 11,329,163.
Prior Publication US 2022/0262955 A1, Aug. 18, 2022
Int. Cl. H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01)
CPC H01L 29/78618 (2013.01) [H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 27/092 (2013.01); H01L 29/0653 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
a first gate-all-around field effect transistor (GAA FET) and a second GAA FET; and
a wall fin disposed between the first GAA FET and the second GAA FET and disposed on an isolation insulating layer, wherein:
the first and second GAA FETs include semiconductor wires or sheets, a gate dielectric layer wrapping around channel regions of the semiconductor wires or sheets, a gate electrode on the gate dielectric layer and a source/drain epitaxial layer,
the wall fin includes a first dielectric layer, a second dielectric layer disposed over the first dielectric layer and a third dielectric layer,
the first, second and third dielectric layers are made of different materials from each other,
the third dielectric layer includes a dielectric material having a dielectric constant higher than the first and second dielectric layers and the isolation insulating layer, and
a fourth dielectric layer different from the first, second and third dielectric layers is disposed on the source/drain epitaxial layer.