US 11,942,536 B2
Semiconductor device having channel structure with 2D material
Robert D. Clark, Albany, NY (US); H. Jim Fulford, Albany, NY (US); and Mark I. Gardner, Albany, NY (US)
Assigned to TOKYO ELECTRON LIMITED, Tokyo (JP)
Filed by Tokyo Electron Limited, Tokyo (JP)
Filed on Feb. 14, 2022, as Appl. No. 17/671,304.
Prior Publication US 2023/0261098 A1, Aug. 17, 2023
Int. Cl. H01L 29/76 (2006.01); H01L 21/8256 (2006.01); H01L 27/092 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/7606 (2013.01) [H01L 21/8256 (2013.01); H01L 27/0922 (2013.01); H01L 29/66969 (2013.01); H01L 29/78642 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a channel structure surrounding a dielectric core, the channel structure comprising a first two-dimensional (2D) material and a second 2D material;
a source metal surrounding a first portion of the channel structure;
a drain metal surrounding a second portion of the channel structure; and
a gate metal surrounding a third portion of the channel structure.