US 11,942,530 B2
Semiconductor devices with backside power rail and methods of fabrication thereof
Chun-Yuan Chen, Hsinchu (TW); Pei-Yu Wang, Hsinchu (TW); Huan-Chieh Su, Changhua (TW); and Chih-Hao Wang, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Dec. 6, 2021, as Appl. No. 17/542,982.
Application 17/542,982 is a continuation of application No. 16/936,233, filed on Jul. 22, 2020, granted, now 11,195,930.
Prior Publication US 2022/0093766 A1, Mar. 24, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 29/45 (2006.01); H01L 21/28 (2006.01); H01L 23/535 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/456 (2013.01) [H01L 21/28097 (2013.01); H01L 23/535 (2013.01); H01L 29/401 (2013.01); H01L 29/42392 (2013.01); H01L 29/78696 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a source/drain feature having a top surface, a bottom surface, and a side surface connecting the top surface and the bottom surface;
a first conductive feature disposed above the top surface of the source/drain feature and in electrical connection with the source/drain feature;
a first silicide layer formed on the top surface of the source/drain feature and in contact with the source/drain features and the first conductive feature; and
a second conductive feature having a body portion and a first sidewall portion extending from the body portion, wherein the second conductive feature is in electrical connection with the source/drain feature, the body portion is below the bottom surface of the source/drain feature, and the first sidewall portion is in contact with the first conductive feature.