US 11,942,525 B2
Semiconductor device with multichannel heterostructure and manufacturing method thereof
Anbang Zhang, Zhuhai (CN); King Yuen Wong, Zhuhai (CN); Hao Li, Zhuhai (CN); Haoning Zheng, Zhuhai (CN); and Jian Wang, Zhuhai (CN)
Assigned to INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai (CN)
Appl. No. 17/257,870
Filed by INNOSCIENCE (ZHUHAI) TECHNOLOGY CO., LTD., Zhuhai (CN)
PCT Filed Apr. 22, 2020, PCT No. PCT/CN2020/086132
§ 371(c)(1), (2) Date Jan. 5, 2021,
PCT Pub. No. WO2021/212366, PCT Pub. Date Oct. 28, 2021.
Prior Publication US 2022/0140094 A1, May 5, 2022
Int. Cl. H01L 29/417 (2006.01); H01L 29/40 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/41766 (2013.01) [H01L 29/401 (2013.01); H01L 29/452 (2013.01); H01L 29/66462 (2013.01); H01L 29/7783 (2013.01)] 12 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor heterostructure layer, comprising alternating first semiconductor material layers and second semiconductor material layers, wherein two-dimensional hole gas (2DHG) may be generated between each first semiconductor material layer and its adjacent second semiconductor material layer;
a drain structure, comprising a plurality of first conductive fingers extending from a surface of the semiconductor heterostructure layer into the semiconductor heterostructure layer, wherein the plurality of first conductive fingers are arranged in a first direction substantially parallel to the surface, and wherein lengths of the plurality of first conductive fingers progressively increase in the first direction so that an end portion of each first conductive finger is respectively positioned in a different second semiconductor material layer and is not in contact with the 2DHGs;
a source structure, including a plurality of second conductive fingers extending from the surface into the semiconductor heterostructure layer, wherein the plurality of second conductive fingers are arranged in the first direction, and wherein lengths of the plurality of second conductive fingers progressively decrease in the first direction so that an end portion of each second conductive finger is respectively positioned in a different second semiconductor material layer and is not in contact with the 2DHGs; and
a gate structure, disposed between the drain structure and the source structure.