US 11,942,523 B2
Semiconductor devices and methods of forming the same
Sai-Hooi Yeong, Zhubei (TW); Pei-Yu Wang, Hsinchu (TW); and Chi On Chui, Hsinchu (TW)
Assigned to Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu (TW)
Filed on Feb. 13, 2023, as Appl. No. 18/168,422.
Application 18/168,422 is a continuation of application No. 17/174,793, filed on Feb. 12, 2021, granted, now 11,581,410.
Prior Publication US 2023/0197801 A1, Jun. 22, 2023
Int. Cl. H01L 29/417 (2006.01); H01L 21/306 (2006.01); H01L 21/3065 (2006.01); H01L 21/8238 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC H01L 29/41733 (2013.01) [H01L 21/823814 (2013.01); H01L 27/092 (2013.01); H01L 29/0673 (2013.01); H01L 29/0847 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/6653 (2013.01); H01L 29/66545 (2013.01); H01L 29/66553 (2013.01); H01L 29/66742 (2013.01); H01L 29/775 (2013.01); H01L 29/7834 (2013.01); H01L 29/78696 (2013.01); H01L 21/30604 (2013.01); H01L 21/3065 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A device comprising:
a nanostructure comprising a lightly doped source/drain region;
an epitaxial source/drain region wrapped around a first portion of the lightly doped source/drain region, the first portion of the lightly doped source/drain region having a first thickness; and
a spacer adjacent the epitaxial source/drain region, the spacer disposed on a second portion of the lightly doped source/drain region, the second portion of the lightly doped source/drain region having a second thickness, the second thickness greater than the first thickness.