US 11,942,521 B2
Epitaxial layers with discontinued aluminium content for III-nitride semiconductor
Peng-Yi Wu, Zhuhai (CN)
Assigned to INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD., Suzhou (CN)
Appl. No. 17/266,120
Filed by INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD., Suzhou (CN)
PCT Filed Dec. 30, 2020, PCT No. PCT/CN2020/141382
§ 371(c)(1), (2) Date Feb. 5, 2021,
PCT Pub. No. WO2022/141190, PCT Pub. Date Jul. 7, 2022.
Prior Publication US 2022/0376057 A1, Nov. 24, 2022
Int. Cl. H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 29/00 (2006.01); H01L 29/04 (2006.01); H01L 29/15 (2006.01); H01L 29/267 (2006.01); H01L 29/778 (2006.01)
CPC H01L 29/267 (2013.01) [H01L 21/02381 (2013.01); H01L 21/02433 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 21/02516 (2013.01); H01L 21/0254 (2013.01); H01L 29/045 (2013.01); H01L 29/155 (2013.01); H01L 29/7786 (2013.01); H01L 21/0262 (2013.01); H01L 21/02631 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a substrate;
a stack of III-nitride transition layers disposed on the substrate, the stack of III-nitride transition layers maintaining an epitaxial relationship to the substrate;
a first III-nitride layer disposed on the stack of III-nitride transition layers; and
a second III-nitride layer disposed on the first III-nitride layer, the second III-nitride layer having a band gap energy greater than that of the first III-nitride layer,
wherein the stack of III-nitride transition layers comprises a first transition layer, a second transition layer on the first transition layer, a third transition layer on the second transition layer, and a fourth transition layer sandwiched between the third transition layer and the first III-nitride layer, and
wherein the second transition layer has a minimum aluminium molar ratio among the first transition layer, the second transition layer and third transition layer; and the fourth transition layer has an aluminium molar ratio smaller than that of the third transition layer.