US 11,942,520 B2
Semiconductor film
Morimichi Watanabe, Nagoya (JP); and Hiroshi Fukui, Obu (JP)
Assigned to NGK INSULATORS, LTD., Nagoya (JP)
Filed by NGK INSULATORS, LTD., Nagoya (JP)
Filed on Oct. 13, 2021, as Appl. No. 17/450,705.
Application 17/450,705 is a continuation of application No. PCT/JP2019/035513, filed on Sep. 10, 2019.
Claims priority of application No. PCT/JP2019/017515 (WO), filed on Apr. 24, 2019.
Prior Publication US 2022/0028982 A1, Jan. 27, 2022
Int. Cl. H01L 29/24 (2006.01); C30B 25/18 (2006.01); C30B 29/16 (2006.01); H01L 21/02 (2006.01); H01L 29/04 (2006.01)
CPC H01L 29/24 (2013.01) [C30B 25/18 (2013.01); C30B 29/16 (2013.01); H01L 21/0242 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/0262 (2013.01); H01L 29/045 (2013.01)] 7 Claims
OG exemplary drawing
 
1. A semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, wherein at least one surface of the semiconductor film has a crystal defect density of 1.0×106/cm2 or less.