CPC H01L 29/24 (2013.01) [C30B 25/18 (2013.01); C30B 29/16 (2013.01); H01L 21/0242 (2013.01); H01L 21/02488 (2013.01); H01L 21/02565 (2013.01); H01L 21/0262 (2013.01); H01L 29/045 (2013.01)] | 7 Claims |
1. A semiconductor film having a corundum-type crystal structure composed of α-Ga2O3 or an α-Ga2O3 solid solution, wherein at least one surface of the semiconductor film has a crystal defect density of 1.0×106/cm2 or less.
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