US 11,942,507 B2
Light emitting diode devices
Erik William Young, San Jose, CA (US); Dennis Scott, Dublin, CA (US); Rajat Sharma, San Jose, CA (US); Toni Lopez, Aachen (DE); and Yu-Chen Shen, San Jose, CA (US)
Assigned to Lumileds LLC, San Jose, CA (US)
Filed by Lumileds LLC, San Jose, CA (US)
Filed on Mar. 5, 2021, as Appl. No. 17/193,017.
Claims priority of provisional application 62/987,969, filed on Mar. 11, 2020.
Prior Publication US 2022/0285425 A1, Sep. 8, 2022
Int. Cl. H01L 33/38 (2010.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 33/24 (2010.01); H01L 33/40 (2010.01); H01L 33/44 (2010.01)
CPC H01L 27/156 (2013.01) [H01L 33/007 (2013.01); H01L 33/24 (2013.01); H01L 33/382 (2013.01); H01L 33/405 (2013.01); H01L 33/44 (2013.01); H01L 2933/0016 (2013.01); H01L 2933/0025 (2013.01)] 22 Claims
OG exemplary drawing
 
1. A light emitting diode (LED) device comprising:
a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, the semiconductor layers including an N-type layer, an active region, and a P-type layer, each of the mesas having a height less than or equal to their width;
an N-contact material in a space between each of the mesas, the N-contact material providing optical isolation between each of the mesas, and electrically contacting the N-type layer of each of the mesas along sidewalls of the N-type layers;
a dielectric material which insulates sidewalls of the P-type layer and the active region from the N-contact material; and
each of the mesas comprising a conductive p-contact layer extending across a first portion of each of the mesas and including an edge, inner spacers between the conductive p-contact layer and the dielectric material extending across a remaining portion of each of the mesas on a portion the P-type layer, and the space between each of the mesas results in a pixel pitch in a range of from 10 μm to 100 μm and a dark space gap between adjacent edges of the conductive p-contact layer of less than 20% of the pixel pitch.