US 11,942,501 B2
Solid-state image pickup apparatus and image pickup system
Nobuyuki Endo, Fujisawa (JP); Tetsuya Itano, Sagamihara (JP); Kazuo Yamazaki, Yokohama (JP); Kyouhei Watanabe, Yokohama (JP); and Takeshi Ichikawa, Hachioji (JP)
Assigned to Canon Kabushiki Kaisha, Tokyo (JP)
Filed by CANON KABUSHIKI KAISHA, Tokyo (JP)
Filed on Mar. 15, 2023, as Appl. No. 18/184,471.
Application 18/184,471 is a continuation of application No. 17/234,614, filed on Apr. 19, 2021, granted, now 11,637,141.
Application 17/234,614 is a continuation of application No. 16/789,944, filed on Feb. 13, 2020, granted, now 11,011,565, issued on May 18, 2021.
Application 16/789,944 is a continuation of application No. 15/851,354, filed on Dec. 21, 2017, granted, now 10,608,034, issued on Mar. 31, 2020.
Application 15/851,354 is a continuation of application No. 15/237,458, filed on Aug. 15, 2016, granted, now 9,881,958, issued on Jan. 30, 2018.
Application 15/237,458 is a continuation of application No. 14/861,985, filed on Sep. 22, 2015, granted, now 9,443,895, issued on Sep. 13, 2016.
Application 14/861,985 is a continuation of application No. 13/898,264, filed on May 20, 2013, granted, now 9,178,081, issued on Nov. 3, 2015.
Application 13/898,264 is a continuation of application No. 12/975,088, filed on Dec. 21, 2010, granted, now 8,466,403, issued on Jun. 18, 2013.
Claims priority of application No. PCT/JP2009/071703 (WO), filed on Dec. 26, 2009.
Prior Publication US 2023/0215894 A1, Jul. 6, 2023
Int. Cl. H01L 27/146 (2006.01); H01L 31/02 (2006.01); H04N 25/76 (2023.01); H04N 25/767 (2023.01)
CPC H01L 27/14634 (2013.01) [H01L 27/14612 (2013.01); H01L 27/14623 (2013.01); H01L 27/14627 (2013.01); H01L 27/1463 (2013.01); H01L 27/14632 (2013.01); H01L 27/14636 (2013.01); H01L 27/1464 (2013.01); H01L 27/14645 (2013.01); H01L 27/14687 (2013.01); H01L 27/1469 (2013.01); H01L 31/02 (2013.01); H04N 25/76 (2023.01); H04N 25/767 (2023.01); H01L 2224/80895 (2013.01); H01L 2224/80896 (2013.01)] 60 Claims
OG exemplary drawing
 
1. A photoelectric conversion apparatus comprising:
a first semiconductor layer including a photoelectric conversion element;
a second semiconductor layer including a source region and a drain region of a transistor, the transistor having a gate electrode disposed between the first semiconductor layer and the second semiconductor layer;
a first multilayer wiring structure disposed between the first semiconductor layer and the second semiconductor layer;
a second multilayer wiring structure disposed between the first multilayer wiring structure and the second semiconductor layer;
a silicide provided on at least one of the gate electrode, the drain region and the source region of the transistor;
an interlayer insulating film disposed between a first wiring layer of the second multilayer wiring structure and a second wiring layer of the second multilayer wiring structure; and
a film composed of a different material from the interlayer insulating film,
wherein a first conductor of the first multilayer wiring structure and a second conductor of the second multilayer wiring structure are bonded at a bonding surface, and
wherein at least a part of the film is located between a height of a first face of the second conductor and a height of a second face of the second conductor.