US 11,942,493 B2
Imaging device and electronic device
Shinya Yamakawa, Kanagawa (JP)
Assigned to Sony Semiconductor Solutions Corporation, Kanagawa (JP)
Appl. No. 17/770,182
Filed by SONY SEMICONDUCTOR SOLUTIONS CORPORATION, Kanagawa (JP)
PCT Filed Sep. 17, 2020, PCT No. PCT/JP2020/035286
§ 371(c)(1), (2) Date Apr. 19, 2022,
PCT Pub. No. WO2021/084959, PCT Pub. Date May 6, 2021.
Claims priority of application No. 2019-196095 (JP), filed on Oct. 29, 2019.
Prior Publication US 2022/0302192 A1, Sep. 22, 2022
Int. Cl. H04N 25/75 (2023.01); H01L 27/146 (2006.01); H04N 25/77 (2023.01)
CPC H01L 27/14616 (2013.01) [H01L 27/14603 (2013.01); H01L 27/14614 (2013.01); H01L 27/14689 (2013.01); H04N 25/75 (2023.01); H01L 27/14645 (2013.01); H04N 25/77 (2023.01)] 8 Claims
OG exemplary drawing
 
1. An imaging device, comprising:
a light receiving element; and
a read circuit configured to read an electrical signal photoelectrically converted by the light receiving element,
wherein a field effect transistor included in the read circuit includes
a semiconductor layer in which a channel is formed,
a gate electrode configured to cover the semiconductor layer, and
a gate insulating film disposed between the semiconductor layer and the gate electrode,
the semiconductor layer includes
a main surface, and
a first side surface located on one end side of the main surface in a gate width direction of the field effect transistor,
the gate electrode includes
a first portion configured to face the main surface via the gate insulating film, and
a second portion configured to face the first side surface via the gate insulating film, and
a crystal plane of the first side surface is a (100) plane or a plane equivalent to the (100) plane.