CPC H01L 27/1461 (2013.01) [G09G 3/2003 (2013.01); H01L 27/14645 (2013.01); G09G 2360/14 (2013.01)] | 10 Claims |
1. A GaN-based image sensor, comprising:
a substrate, wherein the substrate comprises a light sensing processing circuit;
a metal interconnection layer, located on a surface of the substrate and internally provided with a metal interconnection structure; and
a plurality of light sensing units located on the metal interconnection layer, wherein for each of the plurality of light sensing units, the light sensing unit comprises: a red light sensing sub-unit, a green light sensing sub-unit and a blue light sensing sub-unit; the red light sensing sub-unit, the green light sensing sub-unit, and the blue light sensing sub-unit located on a same layer in a direction perpendicular to a plane where the substrate is located; materials of a red light sensing layer of the red light sensing sub-unit, a green light sensing layer of the green light sensing sub-unit, and a blue light sensing layer of the blue light sensing sub-unit are all gallium nitride(GaN)-based materials containing indium(In); the materials of the red light sensing layer, the green light sensing layer and the blue light sensing layer contain different contents of In, enabling the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit to generate or not generate light sensing electrical signals in response to different wave lengths of received light; and the red light sensing sub-unit, the green light sensing sub-unit and the blue light sensing sub-unit are electrically connected to the light sensing processing circuit through the metal interconnection structure to obtain a blue light incidence signal, a green light incidence signal and a red light incidence signal;
wherein a first forward projection area of the red light sensing sub-unit on the substrate is smaller than a second forward projection area of the green light sensing sub-unit on the substrate, and a first component content of In in the material of the red light sensing layer of the red light sensing sub-unit is greater than a second component content of In in the material of the green light sensing layer of the green light sensing sub-unit;
wherein the second forward projection area of the green light sensing sub-unit on the substrate is smaller than a third forward projection area of the blue light sensing sub-unit on the substrate, and the second component content of In in the material of the green light sensing layer of the green light sensing sub-unit is greater than a third component content of In in the material of the blue light sensing layer of the blue light sensing sub-unit.
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