	US 11,942,483 B2
	Semiconductor device and method for manufacturing the same
Hajime Kimura, Kanagawa (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., (JP)
Filed by Semiconductor Energy Laboratory Co., Ltd., Kanagawa-ken (JP)
Filed on Jan. 28, 2022, as Appl. No. 17/586,947.
Application 17/586,947 is a continuation of application No. 16/120,657, filed on Sep. 4, 2018, abandoned.
Application 16/120,657 is a continuation of application No. 15/467,231, filed on Mar. 23, 2017, granted, now 10,068,926, issued on Sep. 4, 2018.
Application 15/467,231 is a continuation of application No. 15/360,226, filed on Nov. 23, 2016, granted, now 10,283,530, issued on May 7, 2019.
Application 15/360,226 is a continuation of application No. 14/718,333, filed on May 21, 2015, granted, now 9,508,862, issued on Nov. 29, 2016.
Application 14/718,333 is a continuation of application No. 14/221,753, filed on Mar. 21, 2014, granted, now 9,040,995, issued on May 26, 2015.
Application 14/221,753 is a continuation of application No. 13/462,945, filed on May 3, 2012, granted, now 8,680,529, issued on Mar. 25, 2014.
Claims priority of application No. 2011-103344 (JP), filed on May 5, 2011.
Prior Publication US 2022/0238563 A1, Jul. 28, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 27/12 (2006.01); H01L 29/04 (2006.01); H01L 29/786 (2006.01); H10K 59/121 (2023.01); H10K 59/123 (2023.01)

CPC H01L 27/1225 (2013.01) [H01L 27/1248 (2013.01); H01L 29/045 (2013.01); H01L 29/786 (2013.01); H01L 29/78648 (2013.01); H01L 29/7869 (2013.01); H01L 27/1259 (2013.01); H01L 27/1262 (2013.01); H10K 59/1213 (2023.02); H10K 59/123 (2023.02)]

6 Claims

1. A display device comprising:

a first conductive layer and a second conductive layer over a substrate;

a third conductive layer configured to be a gate electrode of a transistor;

an insulating layer over a channel of the transistor; and

a pixel electrode and a fourth conductive layer over the insulating layer,

wherein the first conductive layer is made of a same conductive material as the second conductive layer and the third conductive layer,

wherein the pixel electrode is made of a same transparent conductive material as the fourth conductive layer,

wherein the channel includes an oxide semiconductor layer,

wherein the pixel electrode is electrically connected to one of a source electrode and a drain electrode of the transistor,

wherein the fourth conductive layer is electrically connected to the first conductive layer,

wherein the insulating layer includes a first region, a second region and a third region,

wherein the channel overlaps with the first region,

wherein the second conductive layer overlaps with the third region,

wherein a thickness of the second region is larger than a thickness of the first region,

wherein the thickness of the second region is larger than a thickness of the third region,

wherein the pixel electrode overlaps with the second region and the third region, and

wherein the fourth conductive layer overlaps with the first region and the second region.