US 11,942,472 B2
High-voltage electrostatic discharge devices
Kyong Jin Hwang, Singapore (SG); Milova Paul, Singapore (SG); Sagar Premnath Karalkar, Singapore (SG); and Robert J. Gauthier, Jr., Williston, VT (US)
Assigned to GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed by GLOBALFOUNDRIES Singapore Pte. Ltd., Singapore (SG)
Filed on Sep. 15, 2021, as Appl. No. 17/475,942.
Prior Publication US 2023/0078157 A1, Mar. 16, 2023
Int. Cl. H01L 27/02 (2006.01); H01L 21/8222 (2006.01)
CPC H01L 27/0262 (2013.01) [H01L 21/8222 (2013.01); H01L 27/0288 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A structure comprising a vertical silicon-controlled rectifier (SCR) connecting to an anode, which comprises a buried layer of a first dopant type in electrical contact with an underlying buried layer comprising a second dopant type split with an isolation region of the first dopant type within a substrate.