CPC H01L 27/0262 (2013.01) [H01L 21/8222 (2013.01); H01L 27/0288 (2013.01)] | 20 Claims |
1. A structure comprising a vertical silicon-controlled rectifier (SCR) connecting to an anode, which comprises a buried layer of a first dopant type in electrical contact with an underlying buried layer comprising a second dopant type split with an isolation region of the first dopant type within a substrate.
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