US 11,942,451 B2
Semiconductor structure and method of forming the same
Mao-Yen Chang, Kaohsiung (TW); Yu-Chia Lai, Miaoli County (TW); Cheng-Shiuan Wong, Hsinchu (TW); Ting Hao Kuo, Hsinchu (TW); Ching-Hua Hsieh, Hsinchu (TW); Hao-Yi Tsai, Hsinchu (TW); Kuo-Lung Pan, Hsinchu (TW); and Hsiu-Jen Lin, Hsinchu County (TW)
Assigned to Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu (TW)
Filed on Aug. 30, 2021, as Appl. No. 17/460,319.
Prior Publication US 2023/0068263 A1, Mar. 2, 2023
Int. Cl. H01L 21/56 (2006.01); H01L 23/00 (2006.01); H01L 23/544 (2006.01); H01L 23/58 (2006.01)
CPC H01L 24/96 (2013.01) [H01L 21/561 (2013.01); H01L 21/568 (2013.01); H01L 23/544 (2013.01); H01L 23/562 (2013.01); H01L 23/585 (2013.01); H01L 24/24 (2013.01); H01L 24/82 (2013.01); H01L 24/73 (2013.01); H01L 2223/5442 (2013.01); H01L 2223/54426 (2013.01); H01L 2224/24137 (2013.01); H01L 2224/24146 (2013.01); H01L 2224/24265 (2013.01); H01L 2224/73204 (2013.01); H01L 2224/73209 (2013.01); H01L 2224/73217 (2013.01); H01L 2224/82005 (2013.01); H01L 2224/82947 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of forming a semiconductor structure, comprising:
providing a functional die, a first dummy die and a second dummy die, the first dummy die being between the functional die and the second dummy die;
encapsulating the functional die, the first dummy die and the second dummy die by an insulating material;
forming a first alignment mark over the first dummy die and a second alignment mark over the second dummy die, wherein from a top view, a shape of the first alignment mark is different from a shape of the second alignment mark; and
cutting the insulating material along a sawing line between the first alignment mark and the second alignment mark, to separate the functional die and the first dummy die from the second dummy die.