US 11,942,428 B2
Inductors with through-substrate via cores
Kyle K. Kirby, Eagle, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 1, 2020, as Appl. No. 17/108,589.
Application 17/108,589 is a division of application No. 15/584,294, filed on May 2, 2017, abandoned.
Prior Publication US 2021/0082818 A1, Mar. 18, 2021
Int. Cl. H01L 23/535 (2006.01); H01F 17/00 (2006.01); H01L 23/48 (2006.01); H01L 23/522 (2006.01); H01L 49/02 (2006.01)
CPC H01L 23/535 (2013.01) [H01F 17/0033 (2013.01); H01L 23/481 (2013.01); H01L 23/5227 (2013.01); H01L 28/00 (2013.01); H01F 2017/002 (2013.01); H01F 2017/0086 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A semiconductor device, comprising:
a semiconductor substrate;
a through-substrate via (TSV) surrounded by and extending into the semiconductor substrate;
a first substantially helical conductor disposed around the TSV; and
a second substantially helical conductor disposed around the TSV.