CPC H01L 23/535 (2013.01) [H01F 17/0033 (2013.01); H01L 23/481 (2013.01); H01L 23/5227 (2013.01); H01L 28/00 (2013.01); H01F 2017/002 (2013.01); H01F 2017/0086 (2013.01)] | 19 Claims |
1. A semiconductor device, comprising:
a semiconductor substrate;
a through-substrate via (TSV) surrounded by and extending into the semiconductor substrate;
a first substantially helical conductor disposed around the TSV; and
a second substantially helical conductor disposed around the TSV.
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