US 11,942,414 B2
Integrated circuits (ICs) employing directly coupled metal lines between vertically-adjacent interconnect layers for reduced coupling resistance, and related methods
John Jianhong Zhu, San Diego, CA (US); Junjing Bao, San Diego, CA (US); and Giridhar Nallapati, San Diego, CA (US)
Assigned to QUALCOMM Incorporated, San Diego, CA (US)
Filed by QUALCOMM Incorporated, San Diego, CA (US)
Filed on Sep. 17, 2021, as Appl. No. 17/478,539.
Prior Publication US 2023/0108523 A1, Apr. 6, 2023
Int. Cl. H01L 23/522 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/5223 (2013.01) [H01L 23/5226 (2013.01); H01L 23/5227 (2013.01); H01L 24/13 (2013.01); H01L 2224/13025 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A capacitor, comprising:
an interconnect structure, comprising:
an underlying interconnect layer, comprising:
a first underlying metal finger structure comprising a plurality of first underlying metal lines extending in parallel to each other; and
a second underlying metal finger structure comprising a plurality of second underlying metal lines extending in parallel to each other;
the first underlying metal finger structure interdigitated with the second underlying metal finger structure; and
an overlying interconnect layer disposed adjacent to the underlying interconnect layer in a vertical direction, comprising:
a first overlying metal finger structure comprising a plurality of first overlying metal lines extending in parallel to each other; and
a second overlying metal finger structure comprising a plurality of second overlying metal lines extending in parallel to each other;
the first overlying metal finger structure interdigitated with the second overlying metal finger structure,
wherein the first overlying metal finger structure intersects the first underlying metal finger structure in the vertical direction in a first connection region;
the first overlying metal finger structure directly coupled to the first underlying metal finger structure in the first connection region;
the second overlying metal finger structure intersects the second underlying metal finger structure in the vertical direction in a second connection region; and
the second overlying metal finger structure directly coupled to the second underlying metal finger structure in the second connection region.