US 11,942,408 B2
Semiconductor structure and manufacturing method thereof
Shuo-Mao Chen, New Taipei (TW); Feng-Cheng Hsu, New Taipei (TW); and Shin-Puu Jeng, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu (TW)
Filed on May 20, 2022, as Appl. No. 17/749,218.
Application 16/742,424 is a division of application No. 15/851,174, filed on Dec. 21, 2017, granted, now 10,535,597, issued on Jan. 14, 2020.
Application 17/749,218 is a continuation of application No. 16/742,424, filed on Jan. 14, 2020, granted, now 11,342,255.
Claims priority of provisional application 62/445,935, filed on Jan. 13, 2017.
Prior Publication US 2022/0278034 A1, Sep. 1, 2022
Int. Cl. H01L 23/498 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 21/683 (2006.01); H01L 25/18 (2023.01); H01L 23/14 (2006.01); H01L 23/31 (2006.01); H01L 23/538 (2006.01)
CPC H01L 23/49827 (2013.01) [H01L 21/4803 (2013.01); H01L 21/4853 (2013.01); H01L 21/486 (2013.01); H01L 21/56 (2013.01); H01L 21/561 (2013.01); H01L 21/6835 (2013.01); H01L 21/6836 (2013.01); H01L 23/49811 (2013.01); H01L 23/49894 (2013.01); H01L 25/18 (2013.01); H01L 21/4857 (2013.01); H01L 23/147 (2013.01); H01L 23/3128 (2013.01); H01L 23/49816 (2013.01); H01L 23/49822 (2013.01); H01L 23/49833 (2013.01); H01L 23/5385 (2013.01); H01L 23/5389 (2013.01); H01L 2221/68331 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68359 (2013.01); H01L 2221/68381 (2013.01); H01L 2224/73204 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
bonding a plurality of interposer dies to a first redistribution layer (RDL), each of the interposer dies comprising a substrate and a second RDL below the substrate;
encapsulating the first RDL and the interposer dies;
reducing a thickness of the substrate of each of the interposer dies; and
electrically coupling the interposer dies to a first semiconductor die,
wherein the reducing a thickness of the substrate of each of the interposer dies comprises thinning an encapsulating material encapsulating the first RDL and the interposer dies.