US 11,942,401 B2
Half-bridge semiconductor device
Dilder Chowdhury, Nijmegen (NL); Ricardo Lagmay Yandoc, Nijmegen (NL); and Saurabh Pandey, Nijmegen (NL)
Assigned to Nexperia B.V., Nijmegen (NL)
Filed by NEXPERIA B.V., Nijmegen (NL)
Filed on Oct. 14, 2020, as Appl. No. 17/070,381.
Claims priority of application No. 19203160 (EP), filed on Oct. 15, 2019.
Prior Publication US 2021/0111107 A1, Apr. 15, 2021
Int. Cl. H01L 23/495 (2006.01); H01L 21/48 (2006.01); H01L 21/56 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/49575 (2013.01) [H01L 21/4825 (2013.01); H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 23/4951 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A discrete half bridge semiconductor device comprising:
a first cascode arrangement and a second cascode arrangement;
each of the first cascode and second cascode arrangements comprising a high voltage FET device die and a low voltage FET device die;
wherein the high voltage FET device die comprises a source that is mounted on and connected to a drain of the low voltage FET device die; and
wherein the source of the low voltage FET device die and a gate of the high voltage FET device die are electrically and mechanically connected to a drain terminal of the high voltage FET device die of the second cascode arrangement at a common connection pad.