CPC H01L 23/49575 (2013.01) [H01L 21/4825 (2013.01); H01L 21/565 (2013.01); H01L 23/3107 (2013.01); H01L 23/4951 (2013.01); H01L 23/49562 (2013.01); H01L 23/49568 (2013.01)] | 19 Claims |
1. A discrete half bridge semiconductor device comprising:
a first cascode arrangement and a second cascode arrangement;
each of the first cascode and second cascode arrangements comprising a high voltage FET device die and a low voltage FET device die;
wherein the high voltage FET device die comprises a source that is mounted on and connected to a drain of the low voltage FET device die; and
wherein the source of the low voltage FET device die and a gate of the high voltage FET device die are electrically and mechanically connected to a drain terminal of the high voltage FET device die of the second cascode arrangement at a common connection pad.
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