US 11,942,400 B2
Semiconductor apparatus, manufacturing method for semiconductor apparatus, and power converter
Hodaka Rokubuichi, Tokyo (JP); Kei Yamamoto, Tokyo (JP); and Kuniyuki Sato, Tokyo (JP)
Assigned to MITSUBISHI ELECTRIC CORPORATION, Tokyo (JP)
Appl. No. 17/429,946
Filed by Mitsubishi Electric Corporation, Tokyo (JP)
PCT Filed Feb. 26, 2019, PCT No. PCT/JP2019/007322
§ 371(c)(1), (2) Date Aug. 11, 2021,
PCT Pub. No. WO2020/174584, PCT Pub. Date Sep. 3, 2020.
Prior Publication US 2022/0189859 A1, Jun. 16, 2022
Int. Cl. H01L 23/495 (2006.01); H01L 23/31 (2006.01)
CPC H01L 23/49568 (2013.01) [H01L 23/315 (2013.01); H01L 23/49575 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48247 (2013.01); H01L 2924/183 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A semiconductor apparatus comprising:
a semiconductor device;
a lead frame to which the semiconductor device is bonded;
an insulating layer on which the lead frame is provided;
a metal base plate provided on a face of the insulating layer opposite to a face on which the lead frame is provided;
a sealing member to seal the semiconductor device, the lead frame, the insulating layer, and the metal base plate in such a way that a portion of the lead frame and at least one portion of the metal base plate are exposed;
a support frame having at least one opening in which the at least one exposed portion of the metal base plate exposed from the sealing member is inserted; and
a heat dissipating member that is provided with multiple fins formed by folding a metal plate and that is welded to a part of the at least one exposed portion of the metal base plate inserted in the at least one opening and to the support frame.