US 11,942,392 B2
Thermal resistor and method of manufacturing the same
Jaw-Juinn Horng, Hsinchu (TW); Szu-Lin Liu, Hsinchu (TW); and Wei-Lin Lai, Hsinchu (TW)
Assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed by TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu (TW)
Filed on Jan. 24, 2022, as Appl. No. 17/583,158.
Claims priority of provisional application 63/240,159, filed on Sep. 2, 2021.
Prior Publication US 2023/0068846 A1, Mar. 2, 2023
Int. Cl. H01L 23/367 (2006.01); H01L 23/00 (2006.01)
CPC H01L 23/3677 (2013.01) [H01L 24/45 (2013.01); H01L 2224/4807 (2013.01); H01L 2224/48227 (2013.01); H01L 2924/14 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An integrated circuit (IC) device comprising:
a first resistor comprising:
first and second metal segments positioned in a first metal layer and extending in a first direction; and
a third metal segment positioned in a second metal layer, extending in a second direction perpendicular to the first direction, and configured to electrically connect the first and second metal segments to each other; and
a second resistor comprising:
fourth and fifth metal segments positioned in the first metal layer and extending in the first direction; and
a sixth metal segment positioned in a third metal layer, extending in the second direction, and configured to electrically connect the fourth and fifth metal segments to each other,
wherein
each of the first and second metal segments has a first width,
each of the fourth and fifth metal segments has a second width greater than the first width,
the fourth metal segment is positioned between the first and second metal segments and separated from the first metal segment by a first distance, and
the fourth and fifth metal segments are separated from each other by a second distance greater than the first distance.