US 11,942,388 B2
Temperature-assisted device with integrated thin-film heater
Bahman Hekmatshoartabari, White Plains, NY (US); Takashi Ando, Eastchester, NY (US); Nanbo Gong, White Plains, NY (US); and Alexander Reznicek, Troy, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Apr. 20, 2021, as Appl. No. 17/301,939.
Prior Publication US 2022/0336312 A1, Oct. 20, 2022
Int. Cl. H01L 23/34 (2006.01); G01K 7/02 (2021.01); H01L 23/522 (2006.01)
CPC H01L 23/345 (2013.01) [G01K 7/021 (2013.01); H01L 23/5226 (2013.01)] 16 Claims
OG exemplary drawing
 
1. A semiconductor structure comprising:
a heating element located beneath a temperature-controlled region of a chip; and
a thermocouple, wherein the heating element is located between the temperature-controlled region and the thermocouple.