CPC H01L 22/30 (2013.01) [H01L 21/02118 (2013.01); H01L 21/02282 (2013.01); H01L 21/78 (2013.01); H01L 22/14 (2013.01)] | 10 Claims |
1. A semiconductor device, comprising:
a semiconductor substrate including:
a plurality of semiconductor elements arranged in a spreading direction of the semiconductor substrate; and
an inter-element portion between adjacent semiconductor elements among the plurality of semiconductor elements; and
a discharge inhibitor bonded not to a surface of a center of each semiconductor element among the plurality of semiconductor elements but to a surface of the inter-element portion, the discharge inhibitor being made of an insulator, wherein
a thickness of the semiconductor substrate from the surface of the inter-element portion to a bottom surface of the semiconductor substate is uniform across the entire inter-element portion.
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4. A semiconductor device, comprising:
a semiconductor substrate including:
a plurality of semiconductor elements arranged in a spreading direction of the semiconductor substrate; and
an inter-element portion between adjacent semiconductor elements among the plurality of semiconductor elements; and
a discharge inhibitor bonded not to a surface of a center of each semiconductor element among the plurality of semiconductor elements but to a surface of the inter-element portion, the discharge inhibitor being made of an insulator, wherein
the discharge inhibitor can be peeled off from the semiconductor substrate without damaging the plurality of semiconductor elements.
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8. A method for manufacturing a semiconductor element, comprising the steps of:
a) preparing a semiconductor substrate including: a plurality of semiconductor elements arranged in a spreading direction of the semiconductor substrate; and a dicing line between adjacent semiconductor elements among the plurality of semiconductor elements;
b) bonding a discharge inhibitor not to a surface of a center of each semiconductor element among the plurality of semiconductor elements but to a surface of the dicing line so that the discharge inhibitor is bonded to the semiconductor substrate, the discharge inhibitor being made of an insulator;
c) applying a voltage to each semiconductor element after the step b);
d) peeling off the discharge inhibitor from the semiconductor substrate after the step c); and
e) dicing the semiconductor substrate along the dicing line after the step d).
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