US 11,942,374 B2
Nanosheet field effect transistor with a source drain epitaxy replacement
Ruilong Xie, Niskayuna, NY (US); Julien Frougier, Albany, NY (US); Chanro Park, Clifton Park, NY (US); and Kangguo Cheng, Schenectady, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US)
Filed on Jun. 17, 2021, as Appl. No. 17/304,250.
Prior Publication US 2022/0406664 A1, Dec. 22, 2022
Int. Cl. H01L 21/8238 (2006.01); H01L 21/02 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/78 (2006.01); H01L 29/786 (2006.01)
CPC H01L 21/823814 (2013.01) [H01L 21/02532 (2013.01); H01L 21/02576 (2013.01); H01L 21/02579 (2013.01); H01L 21/0259 (2013.01); H01L 21/823807 (2013.01); H01L 21/823871 (2013.01); H01L 27/092 (2013.01); H01L 29/0665 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/7845 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01)] 14 Claims
OG exemplary drawing
 
1. A semiconductor structure, comprising:
a first nanosheet field-effect transistor formed on a first portion of a substrate, the first nanosheet field-effect transistor formed on the first portion of the substrate includes a first source drain epitaxy, wherein a top surface of the first source drain epitaxy is above a top surface of a top-most nanosheet channel layer;
a second nanosheet field-effect transistor formed on a second portion of the substrate, the second nanosheet field-effect transistor formed on the second portion of the substrate includes a second source drain epitaxy and a third source drain epitaxy, wherein the second source drain epitaxy is below the third source drain epitaxy, wherein the third source drain epitaxy is u-shaped and is directly connected to at least one nanosheet channel layer; and
one or more metal contacts, wherein at least one of the one or more metal contacts extends vertically from a top surface of an interlayer dielectric to the at least one nanosheet channel layer.