US 11,942,365 B2
Multi-region diffusion barrier containing titanium, silicon and nitrogen
Vinayak Veer Vats, San Ramon, CA (US); M. Ziaul Karim, San Jose, CA (US); Bo Seon Choi, Yongin-si (KR); Somilkumar J. Rathi, San Jose, CA (US); and Niloy Mukherjee, San Ramon, CA (US)
Assigned to Eugenus, Inc., San Jose, CA (US)
Filed by EUGENUS, INC., San Jose, CA (US)
Filed on May 31, 2018, as Appl. No. 15/994,848.
Application 15/994,848 is a continuation in part of application No. 15/612,853, filed on Jun. 2, 2017.
Prior Publication US 2018/0350657 A1, Dec. 6, 2018
Int. Cl. C23C 16/42 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01); C23C 28/00 (2006.01); H01L 21/02 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/532 (2006.01)
CPC H01L 21/7685 (2013.01) [C23C 16/34 (2013.01); C23C 16/345 (2013.01); C23C 16/42 (2013.01); C23C 16/45527 (2013.01); C23C 16/45529 (2013.01); C23C 28/00 (2013.01); C23C 28/321 (2013.01); C23C 28/34 (2013.01); C23C 28/345 (2013.01); C23C 28/36 (2013.01); H01L 21/02068 (2013.01); H01L 21/28518 (2013.01); H01L 21/28562 (2013.01); H01L 21/76841 (2013.01); H01L 23/53266 (2013.01); H01L 21/76846 (2013.01)] 30 Claims
OG exemplary drawing
 
1. A method of forming an electrically conductive diffusion barrier, the method comprising:
providing a substrate comprising an exposed silicon surface formed of monocrystalline silicon or polycrystalline silicon in a reaction chamber;
forming a titanium silicide (TiSi) region of the diffusion barrier directly on the exposed silicon surface of the substrate by alternatingly exposing the substrate to a first titanium-containing precursor and a first silicon-containing precursor; and
forming a titanium silicon nitride (TiSiN) region of the diffusion barrier directly on the TiSi region by alternatingly exposing the substrate to a second titanium-containing precursor, a nitrogen-containing precursor and a second silicon-containing precursor,
wherein the TiSi region and the TiSiN region are formed in situ, and
wherein a combined thickness of the TiSi region and the TiSiN region does not exceed 10 nm.