US 11,942,361 B2
Semiconductor device cavity formation using directional deposition
Armin Saeedi Vahdat, Burlington, MA (US); Tristan Y. Ma, Lexington, MA (US); Johannes M. van Meer, Middleton, MA (US); John Hautala, Beverly, MA (US); and Naushad K. Variam, Marblehead, MA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Jun. 15, 2021, as Appl. No. 17/348,093.
Prior Publication US 2022/0399225 A1, Dec. 15, 2022
Int. Cl. H01L 21/768 (2006.01); H01L 21/02 (2006.01); H01L 21/764 (2006.01)
CPC H01L 21/7682 (2013.01) [H01L 21/0226 (2013.01); H01L 21/764 (2013.01)] 15 Claims
OG exemplary drawing
 
1. A method, comprising:
providing a plurality of semiconductor structures and a plurality of trenches of a semiconductor device;
forming a dielectric atop the plurality of semiconductor structures by:
delivering a dielectric material at a non-zero angle of inclination relative to a normal extending perpendicular from a top surface of the plurality of semiconductor structures; and
delivering the dielectric material at a second non-zero angle of inclination relative to the normal extending perpendicular from the top surface of the plurality of semiconductor structures, wherein the dielectric material forms a dielectric bridge extending over a cavity within at least one trench of the plurality of trenches.