US 11,942,360 B2
Radio frequency silicon on insulator structure with superior performance, stability, and manufacturability
Michael R. Seacrist, Lake St. Louis, MO (US); Robert W. Standley, Chesterfield, MO (US); Jeffrey L. Libbert, O'Fallon, MO (US); Hariprasad Sreedharamurthy, Ballwin, MO (US); and Leif Jensen, Frederikssund (DK)
Assigned to GlobalWafers Co., Ltd., Hsinchu (TW)
Filed by GlobalWafers Co., Ltd., Hsinchu (TW)
Filed on Mar. 13, 2023, as Appl. No. 18/182,823.
Application 18/182,823 is a continuation of application No. 17/234,023, filed on Apr. 19, 2021, granted, now 11,626,318.
Application 17/234,023 is a continuation of application No. 16/508,606, filed on Jul. 11, 2019, granted, now 11,075,109, issued on Jul. 27, 2021.
Claims priority of provisional application 62/697,474, filed on Jul. 13, 2018.
Prior Publication US 2023/0215759 A1, Jul. 6, 2023
Int. Cl. H01L 21/762 (2006.01); C30B 15/20 (2006.01); C30B 29/06 (2006.01); H01L 21/322 (2006.01); H01L 23/66 (2006.01); H01L 27/12 (2006.01); H01L 29/06 (2006.01)
CPC H01L 21/76243 (2013.01) [C30B 15/206 (2013.01); C30B 29/06 (2013.01); H01L 21/3226 (2013.01); H01L 21/76251 (2013.01); H01L 23/66 (2013.01); H01L 27/1203 (2013.01); H01L 29/0649 (2013.01); H01L 2223/6661 (2013.01)] 31 Claims
OG exemplary drawing
 
1. A method of preparing a multilayer structure, the method comprising:
providing a single crystal semiconductor handle substrate comprising two major, generally parallel surfaces, one of which is a front surface of the single crystal semiconductor handle substrate and the other of which is a back surface of the single crystal semiconductor handle substrate, a circumferential edge joining the front and back surfaces of the single crystal semiconductor handle substrate, and a central plane of the single crystal semiconductor handle substrate between the front and back surfaces of the single crystal semiconductor handle substrate, wherein the single crystal semiconductor handle substrate has a bulk resistivity of at least about 5000 ohm-cm, an interstitial oxygen concentration of less than about 1×1016 atoms/cm3, a nitrogen concentration of at least about 1×1013 atoms/cm3, and an excess thermal donor concentration of less than 1×1011 donors/cm3;
depositing a trap rich layer on the front surface of the single crystal semiconductor handle substrate;
bonding a front surface of a single crystal semiconductor donor substrate to the trap rich layer to thereby form a bonded structure, wherein the single crystal semiconductor donor substrate comprises two major, generally parallel surfaces, one of which is the front surface of the semiconductor donor substrate and the other of which is a back surface of the semiconductor donor substrate, a circumferential edge joining the front and back surfaces of the semiconductor donor substrate, and a central plane between the front and back surfaces of the semiconductor donor substrate; and
annealing the bonded structure.