US 11,942,344 B2
Method of determining a critical temperature of a semiconductor package and apparatus for performing the same
Ilyoung Han, Uiwang-si (KR); Mingi Hong, Hwaseong-si (KR); Choongbo Shim, Asan-si (KR); Heejin Kim, Cheonan-si (KR); and Nungpyo Hong, Goyang-si (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Apr. 7, 2021, as Appl. No. 17/224,564.
Claims priority of application No. 10-2020-0124479 (KR), filed on Sep. 25, 2020.
Prior Publication US 2022/0102172 A1, Mar. 31, 2022
Int. Cl. H01L 21/67 (2006.01); G01J 5/00 (2022.01); G01K 13/00 (2021.01)
CPC H01L 21/67248 (2013.01) [G01J 5/00 (2013.01); G01K 13/00 (2013.01); H01L 21/67103 (2013.01)] 19 Claims
OG exemplary drawing
 
1. A method of determining a critical temperature of a semiconductor package, the method comprising:
applying heat to the semiconductor package;
measuring successive temperatures of the semiconductor package during the applying of the heat by operating an actuator configured to move a temperature sensor along a first horizontal direction and a second horizontal direction substantially perpendicular to the first horizontal direction;
measuring heights of the semiconductor package at each of the successive temperatures during the applying of the heat; and
determining a temperature, as the critical temperature of the semiconductor package, from among the measured temperatures of the semiconductor package at a point at which a height of the semiconductor package is sharply increased so that swelling of the semiconductor package occurs.