US 11,942,333 B2
Method of manufacturing semiconductor device, cleaning method, and non-transitory computer-readable recording medium
Tomihiro Amano, Toyama (JP)
Assigned to Kokusai Electric Corporation, Tokyo (JP)
Filed by Kokusai Electric Corporation, Tokyo (JP)
Filed on Jan. 4, 2023, as Appl. No. 18/093,046.
Application 18/093,046 is a continuation of application No. 17/669,339, filed on Feb. 10, 2022, granted, now 11,574,815.
Claims priority of application No. 2021-142399 (JP), filed on Sep. 1, 2021.
Prior Publication US 2023/0142890 A1, May 11, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/324 (2006.01); C23C 16/44 (2006.01); C23C 16/46 (2006.01)
CPC H01L 21/324 (2013.01) [C23C 16/4405 (2013.01); C23C 16/46 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor device, comprising:
(a) heating a substrate to a first temperature while supplying a process gas into a process vessel accommodating a substrate support;
(b) lowering a temperature of a low temperature structure provided in the process vessel to a second temperature lower than the first temperature by supplying a coolant to a coolant flow path provided in the process vessel for a predetermined time after (a), wherein a defect occurs when a cleaning gas is supplied to the low temperature structure at the first temperature; and
(c) cleaning the low temperature structure by supplying the cleaning gas into the process vessel after (b),
wherein the low temperature structure comprises at least one selected from the group consisting of:
a material provided with a coating capable of preventing corrosion due to the process gas is applied;
a structure located in vicinity of a viewport where through an inside of the process vessel is visually recognizable from an outside of the process vessel; and
a seal provided around the coolant flow path.