US 11,942,332 B2
Methods of etching metal-containing layers
Akhil Mehrotra, Sunnyvale, CA (US); Gene S. Lee, San Jose, CA (US); Abhijit Patil, San Jose, CA (US); Shan Jiang, San Jose, CA (US); and Zohreh Hesabi, San Jose, CA (US)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Filed by Applied Materials, Inc., Santa Clara, CA (US)
Filed on Aug. 12, 2022, as Appl. No. 17/887,206.
Application 17/887,206 is a continuation of application No. 17/197,757, filed on Mar. 10, 2021, granted, now 11,417,537.
Application 17/197,757 is a continuation of application No. 16/828,751, filed on Mar. 24, 2020, granted, now 10,957,558, issued on Mar. 23, 2021.
Application 16/828,751 is a continuation of application No. 16/141,777, filed on Sep. 25, 2018, granted, now 10,636,675, issued on Apr. 28, 2020.
Claims priority of provisional application 62/597,163, filed on Dec. 11, 2017.
Claims priority of provisional application 62/564,257, filed on Sep. 27, 2017.
Prior Publication US 2022/0392774 A1, Dec. 8, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. H01L 21/32 (2006.01); H01L 21/285 (2006.01); H01L 21/3065 (2006.01); H01L 21/311 (2006.01); H01L 21/3213 (2006.01)
CPC H01L 21/32137 (2013.01) [H01L 21/28562 (2013.01); H01L 21/3065 (2013.01); H01L 21/31122 (2013.01); H01L 21/32136 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of removing a metal-containing layer from a substrate, comprising:
generating a first plasma in a process volume of a plasma chamber, wherein
a patterned device is disposed on a substrate support in the process volume, the patterned device comprising:
a patterned region and an unpatterned region;
a substrate;
a metal-containing layer formed over the substrate; and
a supporting layer disposed between the metal-containing layer and the substrate;
depositing a first film over the patterned region of the metal-containing layer with the first plasma; and
removing portions of the unpatterned region of the metal-containing layer with the first plasma without depositing the first film over the unpatterned region.