US 11,942,324 B2
Method for BEOL metal to dielectric adhesion
Qintao Zhang, Mt Kisco, NY (US); Jun-Feng Lu, Shanghai (CN); Ting Cai, Shanghai (CN); Ma Ning, Shanghai (CN); Weiye He, Shanghai (CN); and Jian Kang, Shanghai (CN)
Assigned to Applied Materials, Inc., Santa Clara, CA (US)
Appl. No. 17/266,415
Filed by Applied Materials, Inc., Santa Clara, CA (US)
PCT Filed Jun. 10, 2020, PCT No. PCT/CN2020/095443
§ 371(c)(1), (2) Date Feb. 5, 2021,
PCT Pub. No. WO2021/248378, PCT Pub. Date Dec. 16, 2021.
Prior Publication US 2022/0189774 A1, Jun. 16, 2022
Int. Cl. H01L 21/265 (2006.01); H01L 21/3065 (2006.01); H01L 21/321 (2006.01); H01L 21/768 (2006.01)
CPC H01L 21/26513 (2013.01) [H01L 21/3065 (2013.01); H01L 21/3212 (2013.01); H01L 21/76859 (2013.01); H01L 21/76877 (2013.01)] 18 Claims
OG exemplary drawing
 
1. A method of promoting adhesion between a dielectric layer of a semiconductor device and a metal fill deposited within a trench in the dielectric layer, the method comprising:
performing an ion implantation process wherein an ion beam formed of an ionized dopant species is directed into the trench at an acute angle relative to a top surface of the dielectric layer to form an implantation layer in a sidewall of the trench;
etching the implantation layer back to a depth where a concentration of the implanted dopant species is higher than in other portions of the implantation layer; and
depositing a metal fill in the trench atop an underlying bottom metal layer, wherein the metal fill adheres to the sidewall.