US 11,942,320 B2
Method of manufacturing semiconductor structure
Kun Zhao, Hefei (CN)
Assigned to CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
Appl. No. 17/602,873
Filed by CHANGXIN MEMORY TECHNOLOGIES, INC., Hefei (CN)
PCT Filed Jul. 12, 2021, PCT No. PCT/CN2021/105772
§ 371(c)(1), (2) Date Oct. 11, 2021,
PCT Pub. No. WO2022/179037, PCT Pub. Date Sep. 1, 2022.
Claims priority of application No. 202110219010.4 (CN), filed on Feb. 26, 2021.
Prior Publication US 2023/0059262 A1, Feb. 23, 2023
Int. Cl. H01L 21/02 (2006.01); C23C 16/02 (2006.01); C23C 16/34 (2006.01); C23C 16/455 (2006.01)
CPC H01L 21/0217 (2013.01) [C23C 16/0272 (2013.01); C23C 16/345 (2013.01); C23C 16/45534 (2013.01); C23C 16/45536 (2013.01); H01L 21/02274 (2013.01); H01L 21/0228 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method of manufacturing a semiconductor structure, comprising:
providing a base; and
forming a silicon nitride film layer on the base by an atomic layer deposition process; wherein the atomic layer deposition process comprises multiple cyclic deposition steps; in each of the cyclic deposition steps, a silicon source gas and a nitrogen source gas are provided to a surface of the base;
wherein, before each of the cyclic deposition steps, the method of manufacturing a semiconductor structure further comprises a repair step; in the repair step, a repair gas is provided to the surface of the base, and the repair gas is a hydrogen-containing repair gas; the repair gas comprises a polar molecule for repairing the surface of the base that is damaged.