US 11,942,171 B2
Concurrent compensation in a memory system
Harish V. Gadamsetty, Allen, TX (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by MICRON TECHNOLOGY, INC., Boise, ID (US)
Filed on Feb. 1, 2022, as Appl. No. 17/590,679.
Claims priority of provisional application 63/294,735, filed on Dec. 29, 2021.
Prior Publication US 2023/0207033 A1, Jun. 29, 2023
Int. Cl. G11C 29/02 (2006.01); G11C 7/10 (2006.01); G11C 7/20 (2006.01); G11C 8/06 (2006.01); G11C 29/00 (2006.01); G11C 29/18 (2006.01)
CPC G11C 29/026 (2013.01) [G11C 7/1039 (2013.01); G11C 7/20 (2013.01); G11C 8/06 (2013.01); G11C 29/789 (2013.01); G11C 2029/1802 (2013.01)] 21 Claims
OG exemplary drawing
 
1. An apparatus comprising:
a first memory region including a first memory cell mat including a first plurality of prime memory cells and a first plurality of redundant memory cells, a first sense amplifier coupled to each of the first plurality of prime memory cells and the first plurality of redundant memory cells;
a second memory region including a second memory cell mat including a second plurality of prime memory cells and a second plurality of redundant memory cells, a second sense amplifier coupled to each of the second plurality of prime memory cells and the second plurality of redundant memory cells;
a global row decoder coupled in common to the first and second memory regions, the global row decoder configured, in response to receipt of a first defective row address signal corresponds to a row of the first plurality of prime memory cells, to activate each of the first sense amplifier and the second sense amplifier; and
a row decoder configured, in response to receipt of the first defective row address signal, to provide a first prime section signal corresponding to the first plurality of prime memory cells to the global row decoder such that the first sense amplifier is activated, and to provide a second redundant section signal corresponding to the second plurality of redundant memory cells to the global row decoder such that the second sense amplifier is activated and a row of the second plurality of redundant memory cells is selected.