US 11,942,147 B2
Semiconducting metal oxide memory device using hydrogen-mediated threshold voltage modulation and methods for forming the same
Marcus Johannes Henricus Van Dal, Linden (BE); Gerben Doornbos, Kessel-Lo (BE); Georgios Vellianitis, Haverlee (BE); Blandine Duriez, Brussels (BE); and Mauricio Manfrini, Zhubei (TW)
Assigned to Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed by Taiwan Semiconductor Manufacturing Company Limited, Hsinchu (TW)
Filed on Jul. 25, 2022, as Appl. No. 17/872,111.
Application 17/872,111 is a division of application No. 17/229,748, filed on Apr. 13, 2021, granted, now 11,430,512.
Claims priority of provisional application 63/045,353, filed on Jun. 29, 2020.
Prior Publication US 2022/0359009 A1, Nov. 10, 2022
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/00 (2006.01); G11C 13/00 (2006.01); H10B 63/00 (2023.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01)
CPC G11C 13/0007 (2013.01) [G11C 13/0069 (2013.01); H10B 63/34 (2023.02); H10B 63/80 (2023.02); H10N 70/011 (2023.02); H10N 70/253 (2023.02); H10N 70/841 (2023.02); H10N 70/8833 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A method of operating a semiconductor device, comprising:
providing a semiconductor device including a layer stack between a first electrode and a second electrode, wherein the layer stack includes at least one semiconducting metal oxide layer and at least one hydrogen-containing metal layer over a dielectric material layer;
programming the semiconductor device into a hydrogenated state or a de-hydrogenated state by applying a programming pulse across the first electrode and the second electrode or across a gate electrode located on the at least one hydrogen-containing metal layer and one of the first electrode and the second electrode, wherein the hydrogenated state is a state in which the at least one semiconducting metal oxide layer is impregnated with hydrogen atoms and wherein the de-hydrogenated state is a state in which the at least one semiconducting metal oxide layer is hydrogen-depleted; and
determining a memory state of the semiconductor device.