US 11,942,139 B2
Performing refresh operations on memory cells
Karthik Sarpatwari, Boise, ID (US); Lingming Yang, Meridian, ID (US); Nevil N. Gajera, Meridian, ID (US); and John Christopher M. Sancon, Boise, ID (US)
Assigned to Micron Technology, Inc., Boise, ID (US)
Filed by Micron Technology, Inc., Boise, ID (US)
Filed on Dec. 6, 2022, as Appl. No. 18/075,570.
Application 18/075,570 is a continuation of application No. 17/167,922, filed on Feb. 4, 2021, granted, now 11,532,347.
Prior Publication US 2023/0102468 A1, Mar. 30, 2023
This patent is subject to a terminal disclaimer.
Int. Cl. G11C 11/406 (2006.01); G11C 11/4074 (2006.01); G11C 11/4091 (2006.01)
CPC G11C 11/40622 (2013.01) [G11C 11/40615 (2013.01); G11C 11/4074 (2013.01); G11C 11/4091 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A method, comprising:
sensing respective data states of memory cells of a group of memory cells of a memory by applying a first voltage pulse to the group of memory cells, wherein the memory further comprises one or more additional memory cells whose data state is indicative whether to refresh the group of memory cells;
sensing, while the first voltage pulse is applied to the group of memory cells, a data state of the one or more additional memory cells by applying a second voltage pulse having a greater magnitude than the first voltage pulse to the one or more additional memory cells; and
applying, to perform a refresh operation on the group of memory cells, a third voltage pulse to those memory cells of the group whose data state is sensed to be in a particular data state in response to the sensed data state of the one or more additional memory cells being different from the particular data state.