US 11,942,127 B2
Magnetic memory device and magnetic memory apparatus
Yoshiaki Sonobe, Fujisawa (JP); and Takeshi Kato, Nagoya (JP)
Assigned to Samsung Electronics Co., Ltd., Gyeonggi-do (KR)
Filed by Samsung Electronics Co., Ltd., Suwon-si (KR)
Filed on Jul. 22, 2021, as Appl. No. 17/382,847.
Claims priority of application No. 2020-167193 (JP), filed on Oct. 1, 2020.
Prior Publication US 2022/0108737 A1, Apr. 7, 2022
Int. Cl. G11C 11/00 (2006.01); G01R 33/09 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC G11C 11/161 (2013.01) [G01R 33/093 (2013.01); G11C 11/1675 (2013.01); H10B 61/00 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 20 Claims
OG exemplary drawing
 
1. A magnetic memory device comprising:
a vertical magnetic recording layer extending vertically, which a length of a vertical extension direction thereof is two times or more a cross-sectional length of the vertical magnetic recording layer in a direction perpendicular to the vertical extension direction;
an insulating layer on an upper surface of the vertical magnetic recording layer in the vertical extension direction; and
a fixed layer on the insulating layer in the vertical extension direction.