US 11,942,126 B2
Selectively biasing magnetoresistive random-access memory cells
Michael Rizzolo, Delmar, NY (US); Saba Zare, White Plains, NY (US); Virat Vasav Mehta, Menands, NY (US); and Eric Raymond Evarts, Niskayuna, NY (US)
Assigned to International Business Machines Corporation, Armonk, NY (US)
Filed by International Business Machines Corporation, Armonk, NY (US)
Filed on May 26, 2021, as Appl. No. 17/331,008.
Prior Publication US 2022/0383921 A1, Dec. 1, 2022
Int. Cl. G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/10 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01)
CPC G11C 11/161 (2013.01) [H10B 61/00 (2023.02); H10N 50/01 (2023.02); H10N 50/10 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02)] 14 Claims
OG exemplary drawing
 
1. A magnetoresistive random-access memory (MRAM) cell, the MRAM cell comprising:
a top contact;
a hard mask layer below the top contact;
a magnetic tunnel junction (MTJ) below the hard mask layer;
a diffusion barrier below the MTJ;
a bottom contact below the diffusion barrier; and
a magnetic liner arranged around at least a portion of the bottom contact,
wherein the MRAM cell is part of a memory array comprising a plurality of MRAM cells, the plurality of MRAM cells containing a first set of MRAM cells having a bottom contact and magnetic liner with a first critical dimension and a second set of MRAM cells having a bottom contact and magnetic liner with a second critical dimension that is different than the first critical dimension.