	US 11,941,485 B2
	Method of making a quantum device
Nicolas Posseme, Grenoble (FR); Louis Hutin, Grenoble (FR); Cyrille Le Royer, Grenoble (FR); François Lefloch, Grenoble (FR); Fabrice Nemouchi, Grenoble (FR); and Maud Vinet, Grenoble (FR)
Assigned to COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed by COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, Paris (FR)
Filed on Nov. 24, 2021, as Appl. No. 17/456,388.
Claims priority of application No. 20 12305 (FR), filed on Nov. 27, 2020.
Prior Publication US 2022/0172093 A1, Jun. 2, 2022
Int. Cl. H01L 21/32 (2006.01); G06N 10/00 (2022.01); H01L 21/76 (2006.01); H01L 29/66 (2006.01); H10N 60/01 (2023.01); H10N 60/10 (2023.01)

CPC G06N 10/00 (2019.01) [H01L 29/66977 (2013.01); H10N 60/01 (2023.02); H10N 60/128 (2023.02)]

15 Claims

1. A method for producing a quantum device, comprising:

providing a substrate having a front face and carrying a transistor pattern on the front face thereof, said transistor pattern comprising, in a stack:

a gate dielectric on the front face of the substrate, and

a gate on the gate dielectric, said gate having a top and sidewalls,

forming a protective layer at the front face of the substrate, said protective layer being configured to prevent diffusion of at least one metal species in the substrate,

forming a metal layer based on at least one metal species at least on the sidewalls of the gate, and

forming a superconducting region in the gate by lateral diffusion of the at least one metal species from the sidewalls of said gate.