US 11,941,293 B2
Operation method of storage controller using history table, and storage device including the storage controller
Woohyun Kang, Hwaseong-si (KR); Hyuna Kim, Suwon-si (KR); Minkyu Kim, Suwon-si (KR); Donghoo Lim, Hwaseong-si (KR); and Sanghyun Choi, Seoul (KR)
Assigned to Samsung Electronics Co., Ltd., (KR)
Filed by SAMSUNG ELECTRONICS CO., LTD., Suwon-si (KR)
Filed on Nov. 4, 2021, as Appl. No. 17/518,770.
Claims priority of application No. 10-2021-0045575 (KR), filed on Apr. 8, 2021.
Prior Publication US 2022/0326884 A1, Oct. 13, 2022
Int. Cl. G06F 3/06 (2006.01); G06F 11/10 (2006.01); G06F 13/28 (2006.01); G11C 16/04 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); G11C 11/56 (2006.01)
CPC G06F 3/0659 (2013.01) [G06F 3/0604 (2013.01); G06F 3/0679 (2013.01); G06F 11/1068 (2013.01); G06F 13/28 (2013.01); G11C 16/0483 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); G11C 11/5671 (2013.01)] 20 Claims
OG exemplary drawing
 
1. An operation method of a storage controller that communicates with a non-volatile memory device, the method comprising:
performing a first direct memory access (DMA) read operation on data stored in the non-volatile memory device, based on a first read voltage of a history table;
obtaining a page count value, based on the first DMA read operation;
determining a second read voltage different from the first read voltage based on a difference between the page count value and an idle count value, without an additional read operation for the data stored in the non-volatile memory device; and
updating the history table by changing the first read voltage of the history table to the second read voltage.