US 11,940,707 B2
High-speed and low-voltage electro-optical modulator based on lithium niobate-silicon wafer
Weiwen Zou, Shanghai (CN); Jing Wang, Shanghai (CN); and Shaofu Xu, Shanghai (CN)
Assigned to Shanghai Jiao Tong University, Shanghai (CN)
Filed by Shanghai Jiao Tong University, Shanghai (CN)
Filed on Dec. 9, 2021, as Appl. No. 17/547,124.
Application 17/547,124 is a continuation of application No. PCT/CN2020/080124, filed on Mar. 19, 2020.
Claims priority of application No. 202010111302.1 (CN), filed on Feb. 24, 2020.
Prior Publication US 2022/0100048 A1, Mar. 31, 2022
Int. Cl. G02F 1/21 (2006.01); G02F 1/225 (2006.01)
CPC G02F 1/212 (2021.01) [G02F 1/217 (2021.01); G02F 1/225 (2013.01); G02F 2202/20 (2013.01)] 4 Claims
OG exemplary drawing
 
1. A high-speed and low-voltage electro-optical modulator with a Mach-Zehnder interference structure based on a lithium niobate-silicon wafer, comprising, as arranged from bottom to top,
a silicon substrate layer,
a silicon dioxide isolation layer,
a lithium niobate wafer layer, and
a silicon waveguide layer,
wherein the silicon waveguide layer is etched to form multimode interferometers, a phase shifting arm, spot-size converters, DC bias electrodes, and traveling-wave electrodes;
a high refractive index region, a spot-size conversion region, an electro-optical modulation region, a spot-size conversion region, and a high refractive index region are sequentially formed from an input end to an output end;
the phase shifting arm comprises thermal modulation phase shifters and electrical modulation phase shifters;
the multimode interferometers and the thermal modulation phase shifters are located in the high refractive index regions;
the spot-size converters are located in the spot-size conversion region, and the electrical modulation phase shifters are located in the electro-optical modulation region;
the multimode interferometers, the phase shifting arm, and the spot-size converters constitute a waveguide structure component;
the DC bias electrodes are formed near the thermal modulation phase shifters; and
the traveling-wave electrodes are formed near electrical modulation phase shifters.