US 11,940,702 B2
Composite oxide semiconductor, semiconductor device using the composite oxide semiconductor, and display device including the semiconductor device
Shunpei Yamazaki, Tokyo (JP)
Assigned to Semiconductor Energy Laboratory Co., Ltd., Atsugi (JP)
Filed by SEMICONDUCTOR ENERGY LABORATORY CO., LTD., Atsugi (JP)
Filed on Nov. 28, 2022, as Appl. No. 17/994,481.
Application 17/151,716 is a division of application No. 16/087,685, granted, now 10,942,408, issued on Mar. 9, 2021, previously published as PCT/IB2017/051614, filed on Mar. 21, 2017.
Application 17/994,481 is a continuation of application No. 17/151,716, filed on Jan. 19, 2021, granted, now 11,537,019.
Claims priority of application No. 2016-074398 (JP), filed on Apr. 1, 2016.
Prior Publication US 2023/0111203 A1, Apr. 13, 2023
Int. Cl. G02F 1/1368 (2006.01); G06F 3/041 (2006.01); G06F 3/044 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/24 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10K 50/115 (2023.01)
CPC G02F 1/1368 (2013.01) [H01L 29/0847 (2013.01); H01L 29/1033 (2013.01); H01L 29/24 (2013.01); H01L 29/66969 (2013.01); H01L 29/786 (2013.01); H01L 29/78633 (2013.01); H01L 29/7869 (2013.01); H10K 50/115 (2023.02); G06F 3/0412 (2013.01); G06F 3/0443 (2019.05); G06F 3/0446 (2019.05)] 6 Claims
OG exemplary drawing
 
1. A semiconductor device comprising:
an oxide semiconductor film over a substrate, the oxide semiconductor film comprising a first region comprising In and Zn and a second region comprising In and Zn,
wherein in a cross-sectional view, the first region and the second region are arranged in a same plane along a direction parallel to a top surface of the substrate,
wherein the first region comprises a plurality of first clusters,
wherein the second region comprises a plurality of second clusters,
wherein in a cross-sectional view and a plane view of the oxide semiconductor film, the plurality of first clusters are directly connected to each other in three dimensions,
wherein in a cross-sectional view and a plane view of the oxide semiconductor film, the plurality of second clusters are partly connected to each other,
wherein the plurality of first clusters are sandwiched by the plurality of second clusters in the three dimensions, and
wherein an In concentration in the first region is 2 or more times and 10 or less times an In concentration in the second region.