US 11,940,479 B2
System for determining leakage current of a field effect transistor over temperature
Robert Allan Neidorff, Bedford, NH (US); and Henry Litzmann Edwards, Garland, TX (US)
Assigned to TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed by TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US)
Filed on Jun. 29, 2021, as Appl. No. 17/362,706.
Application 17/362,706 is a division of application No. 16/226,318, filed on Dec. 19, 2018, granted, now 11,085,961.
Prior Publication US 2021/0325443 A1, Oct. 21, 2021
Int. Cl. G01R 31/50 (2020.01); G01R 19/00 (2006.01); G01R 19/165 (2006.01); G01R 31/26 (2020.01); G01R 31/30 (2006.01)
CPC G01R 31/2621 (2013.01) [G01R 19/0092 (2013.01); G01R 19/165 (2013.01); G01R 31/3008 (2013.01); G01R 31/50 (2020.01)] 7 Claims
OG exemplary drawing
 
1. A system, comprising:
a metal oxide semiconductor field effect transistor (MOSFET) having first and second current terminals and a transistor control terminal, wherein the first current terminal is coupled to a current measurement device; and
a switch having first and second switch terminals and a switch control terminal, wherein the first switch terminal is coupled to the transistor control terminal, the second switch terminal is coupled to a voltage source, the switch control terminal is adapted to be coupled to a controller, and the switch is configured to:
responsive to a first signal from the controller, apply a voltage between the transistor control terminal and the second current terminal; and
responsive to a second signal from the controller, apply approximately zero volts to the transistor control terminal.