CPC G01N 27/4148 (2013.01) [B01L 3/502715 (2013.01); H01L 21/30604 (2013.01); H01L 21/76254 (2013.01); B01L 2200/12 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/20 (2013.01); H01L 29/2003 (2013.01)] | 17 Claims |
1. A microsensor for detecting ions in a fluid, comprising:
a field-effect transistor having a source, a drain, an active region between the source and the drain, and a gate positioned above the active region;
an active layer in which the active region is formed;
a dielectric layer positioned beneath the active layer; and
a support substrate positioned beneath the dielectric layer and comprising at least one buried cavity, located plumb with the gate of the field-effect transistor to receive the fluid, the at least one buried cavity comprising a constriction in a vicinity of the dielectric layer and a flared portion in a deeper zone of the support substrate.
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