CPC G01L 9/0073 (2013.01) [B81B 3/0078 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0127 (2013.01)] | 14 Claims |
1. A micromechanical pressure sensor device, comprising:
a semiconductor base substrate of a first doping type, on which an intermediate layer of the first doping type is situated;
a cavity, which includes a recess of a subregion of the semiconductor base substrate and a recess of the intermediate layer;
a sealing layer, the cavity being sealed by a sealing layer of a second doping type and containing a reference pressure, the sealing layer having a diaphragm region situated on a topside of the cavity;
a first grating of the second doping type, which is suspended on a buried connection region of the second doping type, the buried connection region extending laterally away from the cavity into the semiconductor base substrate;
a second grating of the second doping type, which is situated on a side of the diaphragm region pointing to the cavity and is suspended on the diaphragm region, the first grating and the second grating being electrically insulated from each other and forming a capacitance;
a first connection electrically connected to the first grating via the buried connection region; and
a second connection electrically connected to the second grating;
wherein a pressure change between an external pressure and the reference pressure is able to be detected by a capacitance change between the first connection and the second connection.
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