US 11,940,299 B2
Magnetoresistive inertial sensor chip
Bin Qi, Zhangjiagang (CN); Lixian Feng, Zhangjiagang (CN); Haiping Guo, Zhangjiagang (CN); Weifeng Shen, Zhangjiagang (CN); and Songsheng Xue, Zhangjiagang (CN)
Assigned to MultiDimension Technology Co., Ltd., Zhangjiagang (CN)
Appl. No. 17/594,149
Filed by MultiDimension Technology Co., Ltd., Zhangjiagang (CN)
PCT Filed Mar. 27, 2020, PCT No. PCT/CN2020/081618
§ 371(c)(1), (2) Date Oct. 4, 2021,
PCT Pub. No. WO2020/200076, PCT Pub. Date Oct. 8, 2020.
Claims priority of application No. 201910262361.6 (CN), filed on Apr. 2, 2019.
Prior Publication US 2022/0155105 A1, May 19, 2022
Int. Cl. G01D 5/16 (2006.01)
CPC G01D 5/16 (2013.01) 13 Claims
OG exemplary drawing
 
1. A magnetoresistive inertial sensor chip, comprising:
a substrate,
a vibrating diaphragm,
a magnetic field sensing magnetoresistor, and
at least one permanent magnet thin film, wherein
the vibrating diaphragm is located on one side surface of the substrate, the magnetic field sensing magnetoresistor and the permanent magnet thin film are set on the surface of the vibrating diaphragm away from the base of the substrate, a contact electrode is also arranged on the surface of the vibrating diaphragm away from the base of the substrate, and the magnetic field sensing magnetoresistor is connected to the contact electrode through a connecting lead; and
the substrate comprises a cavity formed through etching, either one or both of the magnetic field sensing magnetoresistor and the permanent magnet thin film are arranged in a vertical projection area of the cavity on the vibrating diaphragm, and a component of a magnetic field generated by the permanent magnet thin film in a sensitivity direction of the magnetic field sensing magnetoresistor changes, causing the resistance value of the magnetic field sensing magnetoresistor to change, thereby leading to a change in an output electric signal.