Impurity control during formation of aluminum nitride crystals and thermal treatment of aluminum nitride crystals
Robert T. Bondokov, Watervliet, NY (US); James R. Grandusky, Waterford, NY (US); Jianfeng Chen, Ballston Lake, NY (US); Shichao Wang, Troy, NY (US); Toru Kimura, Tokyo (JP); Thomas Miebach, Malta, NY (US); Keisuke Yamaoka, Fuji (JP); and Leo J. Schowalter, Latham, NY (US)
Assigned to Crystal IS, Inc., Green Island, NY (US)
Filed by Robert T. Bondokov, Watervliet, NY (US); James R. Grandusky, Waterford, NY (US); Jianfeng Chen, Ballston Lake, NY (US); Shichao Wang, Troy, NY (US); Toru Kimura, Tokyo (JP); Thomas Miebach, Malta, NY (US); Keisuke Yamaoka, Fuji (JP); and Leo J. Schowalter, Latham, NY (US)
Filed on Oct. 8, 2021, as Appl. No. 17/496,867.
Application 17/496,867 is a continuation of application No. 16/444,148, filed on Jun. 18, 2019, granted, now 11,168,411.
Claims priority of provisional application 62/686,883, filed on Jun. 19, 2018.
Prior Publication US 2022/0074072 A1, Mar. 10, 2022
1. A light-emitting diode (LED) comprising a light-emitting device structure disposed over a single-crystal AlN substrate, configured to emit ultraviolet (UV) light at a wavelength ranging from 228 nm to 238 nm, and having an external quantum efficiency ranging from 0.02% to 0.5%, for room temperature continuous wave operation at an operating current of 20 mA.