US 11,939,699 B2
SiC substrate and SiC ingot
Masato Ito, Ichihara (JP); and Hiromasa Suo, Ichihara (JP)
Assigned to Resonac Corporation, Tokyo (JP)
Filed by Resonac Corporation, Tokyo (JP)
Filed on Feb. 28, 2023, as Appl. No. 18/115,346.
Claims priority of application No. 2022-090456 (JP), filed on Jun. 2, 2022.
Prior Publication US 2023/0392286 A1, Dec. 7, 2023
Int. Cl. B32B 3/00 (2006.01); C01B 32/956 (2017.01); C30B 29/36 (2006.01)
CPC C30B 29/36 (2013.01) [C01B 32/956 (2017.08); C01P 2006/40 (2013.01)] 20 Claims
OG exemplary drawing
 
1. A SiC substrate,
wherein, when resistivities at a plurality of first measurement points that are in a region inside a boundary located 5 mm inward from an outer circumferential end thereof and that include a center and a plurality of measurement points separated by 10 mm from each other in the [11-20] direction or the [−1-120] direction from the center, and at two second measurement points that are located 1 mm inward from the outer circumferential end and located in each of the [11-20] direction from the center and the [−1-120] direction from the center are measured, a difference between the maximum resistivity and the minimum resistivity among the resistivities of each of the plurality of first measurement points and the two second measurement points is 2 mΩ·cm or less, and
a region other than a high nitrogen concentration region called a facet is included.