US 11,939,678 B2
Method of making a semiconductor manufacturing apparatus member
Yasutaka Nitta, Kitakyushu (JP); and Takuma Wada, Kitakyushu (JP)
Assigned to TOTO LTD., Kitakyushu (JP)
Filed by TOTO LTD., Kitakyushu (JP)
Filed on Nov. 23, 2021, as Appl. No. 17/533,579.
Application 17/533,579 is a division of application No. 16/802,059, filed on Feb. 26, 2020, abandoned.
Claims priority of application No. 2019-033545 (JP), filed on Feb. 27, 2019; and application No. 2019-222020 (JP), filed on Dec. 9, 2019.
Prior Publication US 2022/0139676 A1, May 5, 2022
Int. Cl. C23C 24/04 (2006.01); H01J 37/32 (2006.01); C23C 16/44 (2006.01); H01L 21/687 (2006.01)
CPC C23C 24/04 (2013.01) [H01J 37/321 (2013.01); H01J 37/32477 (2013.01); H01J 37/32715 (2013.01); C23C 16/4404 (2013.01); H01J 2237/2007 (2013.01); H01J 2237/3341 (2013.01); H01L 21/68757 (2013.01)] 5 Claims
OG exemplary drawing
 
1. A method of making a semiconductor manufacturing apparatus member having particle resistance, comprising steps of:
a) preparing a base comprising aluminum and having an alumite layer which is an anodic oxidation film at an upper surface of the base, wherein the alumite layer has a porous columnar structure, wherein a Young's modulus of the alumite layer is greater than 90 GPa and is less than or equal to 120 GPa; and
b) forming a particle-resistant layer of Y2O3 on the alumite layer by aerosol deposition, in which an aerosol containing fine particles of a brittle material dispersed in a gas is ejected from a nozzle to impact against a surface of the alumite layer, wherein the particle-resistant layer includes a polycrystalline ceramic;
wherein the particle-resistant layer has an arithmetic average height Sa of 0.060 μm or less after a reference plasma test is completed in which the semiconductor manufacturing apparatus member is exposed to a plasma.