	US 11,939,672 B2
	Ultralight robust plate materials
Igor Bargatin, Wynnewood, PA (US); and Keivan Davami, Philadelphia, PA (US)
Assigned to THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA, Philadelphia, PA (US)
Filed by THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA, Philadelphia, PA (US)
Filed on Dec. 3, 2021, as Appl. No. 17/541,681.
Application 17/541,681 is a division of application No. 16/787,733, filed on Feb. 11, 2020, granted, now 11,198,938.
Application 16/787,733 is a division of application No. 15/456,718, filed on Mar. 13, 2017, granted, now 10,612,138, issued on Apr. 7, 2020.
Application 15/456,718 is a continuation in part of application No. PCT/US2015/050008, filed on Sep. 14, 2015.
Claims priority of provisional application 62/050,661, filed on Sep. 15, 2014.
Prior Publication US 2022/0154334 A1, May 19, 2022
Int. Cl. H01L 21/3065 (2006.01); C23C 16/01 (2006.01); C23C 16/12 (2006.01); C23C 16/455 (2006.01); C23C 16/50 (2006.01); H01J 37/32 (2006.01)

CPC C23C 16/45525 (2013.01) [C23C 16/01 (2013.01); C23C 16/12 (2013.01); C23C 16/45555 (2013.01); C23C 16/50 (2013.01); H01J 37/321 (2013.01); H01J 2237/334 (2013.01); H01L 21/3065 (2013.01)]

21 Claims

1. A method of fabricating a plate structure comprising:

creating a plate structure pattern in a silicon substrate, the plate structure pattern defining ridges that form a pattern;

depositing a layer of aluminum oxide (Al₂O₃) on a first side of the silicon substrate to form a patterned aluminum oxide;

removing the silicon substrate using reactive ion etching; and

using plasma-enhanced chemical vapor deposition to deposit a thin film on both sides of the patterned aluminum oxide,

wherein the plate structure has a thickness between about 1 nanometer (“nm”) and about 1 millimeter (“mm”).

11. A method of fabricating a plate structure comprising:

depositing a first layer of aluminum oxide (Al₂O₃) on a first side of a substrate;

depositing a layer of sacrificial layer of amorphous silicon on top of the layer of the aluminum oxide;

etching the layer of amorphous silicon to form a hexagonal honeycomb pattern;

depositing a second layer of aluminum oxide (Al₂O₃) on the etched layer of amorphous silicon;

etching the second layer of aluminum oxide to at least create through holes to the layer of amorphous silicon;

removing the amorphous silicon and suspending the patterned first and second layers of aluminum oxide; and

using plasma-enhanced chemical vapor deposition to deposit a thin film on both sides of the patterned first and second layers of aluminum oxide.