CPC C23C 16/08 (2013.01) [C23C 16/45523 (2013.01); C23C 16/458 (2013.01)] | 20 Claims |
1. A method of forming a tungsten-containing layer over a substrate, the method comprising:
a) positioning a substrate on a substrate support in a process volume of a process chamber;
b) providing a precursor gas to the process volume of the process chamber for a first duration; and
c) providing a tungsten-containing gas to the process volume of the process chamber by opening a pulsing valve on a tungsten-containing gas delivery line for a second duration occurring after the first duration to form a tungsten-containing layer on the substrate, wherein
the tungsten-containing gas delivery line includes a first section connected to an inlet of the pulsing valve and a second section connected to an outlet of the pulsing valve,
the first section connects the inlet of the pulsing valve to a reservoir of tungsten-containing gas,
the second section connects the outlet of the pulsing valve to an inlet of the process volume of the process chamber, and
an internal cross-sectional area of the first section of the tungsten-containing gas delivery line is at least 10% larger than an internal cross-sectional area of the second section of the tungsten-containing gas delivery line.
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