US 11,939,661 B2
Tungsten sputtering target and method for manufacturing the same
Shinji Sogawa, Ibaraki (JP); Takafumi Dasai, Ibaraki (JP); and Seiji Nakasumi, Ibaraki (JP)
Assigned to JX Metals Corporation, Tokyo (JP)
Appl. No. 16/758,589
Filed by JX Nippon Mining & Metals Corporation, Tokyo (JP)
PCT Filed Sep. 7, 2018, PCT No. PCT/JP2018/033273
§ 371(c)(1), (2) Date Apr. 23, 2020,
PCT Pub. No. WO2019/092969, PCT Pub. Date May 16, 2019.
Claims priority of application No. 2017-217737 (JP), filed on Nov. 10, 2017.
Prior Publication US 2020/0370167 A1, Nov. 26, 2020
Int. Cl. C23C 14/34 (2006.01); B22F 3/15 (2006.01); B22F 3/18 (2006.01); C22C 27/04 (2006.01)
CPC C23C 14/3414 (2013.01) [B22F 3/15 (2013.01); B22F 3/18 (2013.01); C22C 27/04 (2013.01)] 6 Claims
OG exemplary drawing
 
1. A tungsten sputtering target, wherein a purity of tungsten is 5 N (99.999% by weight) or more, and an impurity of carbon and an impurity of oxygen contained in tungsten are 50 ppm by weight or less, respectively, and an average grain size of tungsten crystal is more than 347 μm.